Germanium photodiodes are commonly used to measure optical power in the NIR range, especially in cost-sensitive applications or where a large-area detector is needed. However, germanium detectors have a lower shunt resistance and higher dark current than similarly-sized InGaAs detectors, resulting in higher noise levels overall. Therefore, germanium detectors are well suited for applications where the signal being detected is much higher than the noise floor. GPD Optoelectronics offers an “HS” series of germanium photodiodes which have higher-than-typical shunt resistance for improved performance.
Opto/Electronic Characteristics @ 23 ºC ± 2 ºC |
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| Active Diameter | 1 | 1 | 1 | 2 | 2 | 2 | 3 | 3 | 3 | 5 | 5 | 5 | 10×10 | mm |
| Part Number | GB1-T18 GB1-LCC6 | GH1-T18 GH1-LCC6 | GV1-T18 GV1-LCC6 | GB2-T5 GB2-LCC6 | GH2-T5 GH2-LCC6 | GV2-T5 GV2-LCC6 | GB3-T5 GB3-LCC28 | GH3-T5 GH3-LCC28 | GV3-T5 GV3-LCC28 | GB5-T8 GB5-LCC28 | GH5-T8 GH5-LCC28 | GV5-T8 GV5-LCC28 | GH10-T9 GH10-LCC28 | |
| Spectral Response | 800-1800 | 800-1800 | 800-1800 | 800-1800 | 800-1800 | 800-1800 | 800-1800 | 800-1800 | 800-1800 | 800-1800 | 800-1800 | 800-1800 | 800-1800 | nm |
| Rλ(typ)@ 850 nm | 0.26 | 0.26 | 0.26 | 0.26 | 0.26 | 0.26 | 0.26 | 0.26 | 0.26 | 0.26 | 0.26 | 0.26 | 0.26 | A/W |
| Rλ(typ) @ 1300 nm | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | 0.70 | A/W |
| Rλ(typ)@ 1550 nm | 0.85 | 0.85 | 0.85 | 0.85 | 0.85 | 0.85 | 0.85 | 0.85 | 0.85 | 0.85 | 0.85 | 0.85 | 0.85 | A/W |
| RSHUNT (min/typ) | 20/40 | 60/100 | 200/280 | 6/12 | 30/60 | 80/120 | 4/8 | 25/35 | 40/65 | 2/4 | 10/15 | 15/20 | 2/3.5 | kΩ |
| IDARK (max) | 3 | 1.5 | 0.5 | 10 | 3 | 1 | 30 | 4 | 3 | 40 | 15 | 5 | 50 | μA |
| CDIODE (max) | 85 | 300 | 1,450 | 300 | 1,200 | 9,000 | 800 | 4,000 | 13,000 | 3,000 | 6,000 | 35,000 | 30,000 | pF |
| VREVERSE | 10 | 2 | 0.3 | 10 | 2 | 0.3 | 5 | 1 | 0.25 | 3 | 1 | 0.1 | 0.5 | V |
| NEP | 1.5 | 1 | 0.6 | 3 | 1.4 | 0.8 | 4 | 2 | 1 | 5 | 3 | 2 | 6 | pW/Hz1/2 |
| Linearity | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 | dB |
| TO Packages | TO-18 | TO-18 | TO-18 | TO-5 | TO-5 | TO-5 | TO-5 | TO-5 | TO-5 | TO-8 | TO-8 | TO-8 | TO-9 | |
| Leadless Chip Carrier | LCC-6 | LCC-6 | LCC-6 | LCC-6 | LCC-6 | LCC-6 | LCC-28 | LCC-28 | LCC-28 | LCC-28 | LCC-28 | LCC-28 | Hybrid | |
| Storage Temperature | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | ºC |
| Operating Temperature | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | -40 to 85 | ºC |
| Max Reverse Voltage | 15 | 3 | 0.3 | 15 | 3 | 0.5 | 10 | 3 | 0.5 | 5 | 3 | 0.3 | 1 | V |
| Max Reverse Current | -10 | -10 | -10 | -10 | -10 | -10 | -10 | -10 | -10 | -10 | -10 | -10 | -10 | mA |
| Max Forward Current | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | 10 | mA |
Designed for high-speed applications with reverse bias > 10 V
Designed for applications with reverse bias < 5 V
Designed for zero bias applications
Designed for zero bias applications requiring high shunt resistance
GPD qualifications